The SIO3415NC uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .
Single P-Nchannel Enhancement Mode Field Effect Transistor
● VDS = -20V,ID = -4.1A
RDS(ON) < 35mΩ @ VGS=-4.5V
RDS(ON) < 50mΩ @ VGS=-2.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package