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SIO2622E
The SIO2622E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
产品详情
Single N-Nchannel Enhancement Mode Field Effect Transistor
General Features
● VDS = 20V,ID = 6A
RDS(ON) < 17mΩ @ VGS=4.5V
RDS(ON) < 21mΩ @ VGS=2.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
● ESD Rating：HBM 2000V