产品详情

Single N-Nchannel Enhancement Mode Field Effect Transistor

General Features

●  VDS = 30V,ID = 5.8A

    RDS(ON) < 28mΩ @ VGS=10V

    RDS(ON) < 31mΩ @ VGS=4.5V

●  High Power and current handing capability

●  Lead free product is acquired

●  Surface Mount Package