产品详情

Dual N-Nchannel Enhancement Mode Field Effect Transistor

General Features

●  VDS = 20V,ID = 6A

    RDS(ON) < 15mΩ @ VGS=4.5V

    RDS(ON) < 20mΩ @ VGS=2.5V

●  High Power and current handing capability

●  Lead free product is acquired

●  Surface Mount Package

●  ESD Rating:2000V HBM