The SIS1617 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.
Single P-Nchannel Enhancement Mode Field Effect Transistor
● VDS =-12V,ID = -8A
RDS(ON) < 17mΩ @ VGS=-4.5V
RDS(ON) < 21mΩ @ VGS=-2.5V
● Advanced trench MOSFET process technology
● Ultra low on-resistance with low gate charge
● Surface Mount Package