产品详情

Dual P-Nchannel Enhancement Mode Field Effect Transistor

General Features

●  VDS =-20V,ID = -4.5A

    RDS(ON) < 65mΩ @ VGS=-4.5V

    RDS(ON) < 90mΩ @ VGS=-2.5V

●  Advanced trench MOSFET process technology

●  Ultra low on-resistance with low gate charge

●  Surface Mount Package