产品详情

Dual N-Nchannel Enhancement Mode Field Effect Transistor

General Features

●  VDS = 20V,ID = 5A

    RDS(ON) < 20mΩ @ VGS=4.5V

    RDS(ON) < 25mΩ @ VGS=2.5V

●  Advanced trench MOSFET process technology

●  Ultra low on-resistance with low gate charge

●  Surface Mount Package