产品详情

Complementary Enhancement Mode Field Effect Transistor

General Features

●  VDS = 20V,ID = 5A AND VDS = -20V,ID = -4.5A

    RDS(ON) < 20mΩ @ VGS=4.5V AND RDS(ON) < 60mΩ @ VGS=-4.5V

    RDS(ON) < 25mΩ @ VGS=2.5V AND RDS(ON) < 90mΩ @ VGS=-2.5V

●  Super High Dense Cell Design

●  Reliable and Rugged

●  Surface Mount Package