产品详情

Dual N-Channel Enhancement Mode Field Effect Transistor

General Features

●  VDS = 20V,ID = 7A 

    RDS(ON) < 15mΩ @ VGS=4.5V 

    RDS(ON) < 20mΩ @ VGS=2.5V 

●  Advanced Trench Process Technology

●  High Density Cell Design for Ultra Low On-Resistance

●  Rugged and reliable

●  Surface Mount package.