The SIS2017RG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
Dual N-Channel Enhancement Mode Field Effect Transistor
● VDS = 20V,ID = 7A
RDS(ON) < 15mΩ @ VGS=4.5V
RDS(ON) < 20mΩ @ VGS=2.5V
● Advanced Trench Process Technology
● High Density Cell Design for Ultra Low On-Resistance
● Rugged and reliable
● Surface Mount package.