The SIS4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
Dual P-Channel Enhancement Mode Field Effect Transistor
● VDS = -30V,ID = -5.3A
RDS(ON) < 45mΩ @ VGS=-10V
RDS(ON) < 70mΩ @ VGS=-4.5V
● Advanced Trench Process Technology
● Rugged and reliable
● Surface Mount package.