产品详情

Single P-Channel Enhancement Mode Field Effect Transistor

General Features

●  VDS = -30V,ID = -5.3A 

    RDS(ON) < 45mΩ @ VGS=-10V 

    RDS(ON) < 70mΩ @ VGS=-4.5V 

●  Advanced Trench Process Technology

●  Rugged and reliable

●  Surface Mount package.