The SIS9926SQ is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Dual N-Channel Enhancement Mode Field Effect Transistor
● VDS = 20V,ID = 6A
RDS(ON) < 25mΩ @ VGS=4.5V
RDS(ON) < 35mΩ @ VGS=2.5V
● Advanced Trench Process Technology
● Rugged and reliable
● Surface Mount package.