The SIS4435A uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V.
Single P-Channel Enhancement Mode Field Effect Transistor
● VDS = -30V,ID = -9.1A
RDS(ON) < 15mΩ @ VGS=-10V
RDS(ON) < 21mΩ @ VGS=-4.5V
● Advanced Trench Process Technology
● Rugged and reliable
● Surface Mount package.