产品详情

Single P-Channel Enhancement Mode Field Effect Transistor

General Features

●  VDS = -30V,ID = -13A 

    RDS(ON) < 12mΩ @ VGS=-10V 

    RDS(ON) < 16mΩ @ VGS=-4.5V 

●  Super high density cell design for extremely low RDS(ON)

●  Exceptional on-resistance and maximum DC current capability

●  Surface Mount package.