The SIP2106DE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested.
Dual N-Channel Enhancement Mode Field Effect Transistor
● VDS = 20V,ID = 13A
RDS(ON) < 5.5mΩ @ VGS=4.5V
RDS(ON) < 7mΩ @ VGS=2.5V
● High power and current handing capability
● Lead free product is acquired
● Surface Mount package.
● ESD Rating: 2000V HBM