产品详情

Dual P-Channel Enhancement Mode Field Effect Transistor

General Features

●  VDS = -20V,ID = -7A 

    RDS(ON) < 21mΩ @ VGS=-4.5V 

    RDS(ON) < 29mΩ @ VGS=-2.5V 

●  Advanced Trench Process Technology

●  Rugged and reliable

●  Surface Mount package.