The SIP2623 is the N and P Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery loss are needed in a very small outline surface mount package.
Complementary Enhancement Mode Field Effect Transistor
● VDS = 20V,ID = 6A AND VDS = -20V,ID = -5.5A
RDS(ON) < 20mΩ @ VGS= 4.5V AND RDS(ON) < 35mΩ @ VGS= -4.5V
RDS(ON) < 25mΩ @ VGS= 2.5V AND RDS(ON) < 45mΩ @ VGS= -2.5V
● Advanced Trench Process Technology
● Rugged and reliable
● Surface Mount package.