产品详情

Complementary Enhancement Mode Field Effect Transistor

General Features

●  VDS = 30V,ID = 7.1A AND VDS = -30V,ID = -6A

    RDS(ON) < 21mΩ @ VGS= 10V AND  RDS(ON) < 30mΩ @ VGS= -10V

    RDS(ON) < 32mΩ @ VGS= 4.5V AND  RDS(ON) < 40mΩ @ VGS= -4.5V

●  Advanced Trench Process Technology

●  Rugged and reliable

●  Surface Mount package.