Single N-Channel Enhancement Mode Field Effect Transistor

General Features

●  VDS = 30V,ID = 80A 

    RDS(ON) < 5.5mΩ @ VGS= 10V 

●  High density cell design for ultra low Rdson

●  Fully characterized avalanche voltage and current

●  Good stability and uniformity with high EAS

●  Excellent package for good heat dissipation