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SIR3808
The SIR3808 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
产品详情
Single N-Channel Enhancement Mode Field Effect Transistor
General Features
● VDS = 30V,ID = 80A
RDS(ON) < 5.5mΩ @ VGS= 10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation