产品详情

Single N-Channel Enhancement Mode Field Effect Transistor

General Features

●  VDS = 80V,ID = 80A 

    RDS(ON) < 6.5mΩ @ VGS= 10V 

●  Advanced MOSFET process technology

●  Special designed for PWM, load switching and general purpose applications

●  Ultra low on-resistance with low gate charge

●  Fast switching and reverse body recovery

●  175℃ operating temperature