The SID6806A is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SID6808L is assembled in high reliability and qualified assembly house.
Single N-Channel Enhancement Mode Field Effect Transistor
● VDS = 68V,ID = 80A
RDS(ON) < 6mΩ @ VGS= 10V
● Advanced trench process technology
● Ultra low on-resistance with low gate charge
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current